Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRC630
IRC630 spec: "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRC630
IRC630 spec: "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
Producent : IR
Opakowanie : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 251 KB
Zastosowanie : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"