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IRC644 spec: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
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- IRC644
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 Datasheet i Spec
Producent : IR
Opakowanie : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 247 KB
Zastosowanie : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 PDF Pobierz