Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-97

TRL SD253N16S20PBV SD600N08PSC 110RKI120 ST700C22L3 SD453N25S30MTC SD453N12S30PSC 130HF80MSV ST333C08CHK2L SD150R14PSC SD150R16PSV IRFD420 ST333C04CHK2 SD200N20PC 303UA80P2 SD103R25S20MBC IRFR9120N 302UFR160APD SD253R04S20MV SD103R04S10MC IRG4BC20FD SD1053C25S30L SD453N20S30PC IR

IR Prospekty Katalog-97

Część nrProducentZastosowanie
309URA250P4 IRStandard recovery diode
IRLR120NTRL IRN-channel power MOSFET, 100V, 10A
SD253N16S20PBV IRFast recovery diode
SD600N08PSC IRStandard recovery diode
110RKI120 IRPhase control thyristor
ST700C22L3 IRPhase control thyristor
SD453N25S30MTC IRFast recovery diode
SD453N12S30PSC IRFast recovery diode
130HF80MSV IRStandard recovery diode
ST333C08CHK2L IRInverter grade thyristor
SD150R14PSC IRStandard recovery diode
SD150R16PSV IRStandard recovery diode
IRFD420 IRHEXFET power MOSFET
ST333C04CHK2 IRInverter grade thyristor
SD200N20PC IRStandard recovery diode
303UA80P2 IRStandard recovery diode
SD103R25S20MBC IRFast recovery diode
IRFR9120N IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
302UFR160APD IRStandard recovery diode
SD253R04S20MV IRFast recovery diode
SD103R04S10MC IRFast recovery diode
IRG4BC20FD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
SD1053C25S30L IRFast recovery diode
SD453N20S30PC IRFast recovery diode
IRFU9220 IRHEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
SD150R04MSC IRStandard recovery diode
IRFU9214 IRHEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A
ST1900C48R0 IRPhase control thyristor
ST280S06P0V IRPhase control thyristor
IRFP450LC IRHEXFET power mosfet

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