Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-93

20 ST303C08CHK0 ST303C04LHK2 ST300C20L3 SD153N10S10MSV ST2100C38R0L SD103R12S10PC 303URA120P2 300HF40PS IR2112 SD600N20PTC 307U200P3 ST730C18L3 SD153R16S10MBV 70U120AYPD IRF7807A SD300N28MC ST180C16C0 IRG4BC30K-S ST3230C12R1L IRFP448 301U80P2 SD200R20MSC SD103R04S15MBC ST333S08PF

IR Prospekty Katalog-93

Część nrProducentZastosowanie
ST203C12CHH2L IRInverter grade thyristor
305UR120 IRStandard recovery diode
ST303C08CHK0 IRInverter grade thyristor
ST303C04LHK2 IRInverter grade thyristor
ST300C20L3 IRPhase control thyristor
SD153N10S10MSV IRFast recovery diode
ST2100C38R0L IRPhase control thyristor
SD103R12S10PC IRFast recovery diode
303URA120P2 IRStandard recovery diode
300HF40PS IRStandard recovery diode
IR2112 IRHigh and low side driver
SD600N20PTC IRStandard recovery diode
307U200P3 IRStandard recovery diode
ST730C18L3 IRPhase control thyristor
SD153R16S10MBV IRFast recovery diode
70U120AYPD IRStandard recovery diode
IRF7807A IRHEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm.
SD300N28MC IRStandard recovery diode
ST180C16C0 IRPhase control thyristor
IRG4BC30K-S IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
ST3230C12R1L IRPhase control thyristor
IRFP448 IRHEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.60 Ohm, ID = 11 A
301U80P2 IRStandard recovery diode
SD200R20MSC IRStandard recovery diode
SD103R04S15MBC IRFast recovery diode
ST333S08PFM0L IRInverter grade thyristor
303URA160P4 IRStandard recovery diode
IRG4PC50U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A
SD103N25S20PSC IRFast recovery diode
SD403C04S10C IRFast recovery diode

<< 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 >>