Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC30K-S
IRG4BC30K-S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC30K-S
IRG4BC30K-S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Producent : IR
Opakowanie : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 177 KB
Zastosowanie : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A