Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-100
JANTXV2N6802 SD233R40S50PC ST2600C30R2 ST2600C22R3L ST300C08L1 IRGBC20K IRF9140 47LFR80 ST180C12C3L ST173C12CHK3 IRFPC30 SD103R14S20PSC IR8200B ST300C04C1 SD203R04S15PC ST380C06C0L IRFZ24NL ST730C14L2 301U200P5 SD203R25S15MBC IRFP150N SD203R20S20PC 302U160PD IRFD224 SD103R16S15M
Część nr | Producent | Zastosowanie |
---|---|---|
30CPF02 | IR | Fast soft recovery rectifier diode, 10A, 200V, 60ns |
IRU1050-33CP | IR | 5A low dropout positive fixed 3.3V regulator |
JANTXV2N6802 | IR | HEXFET power mosfet |
SD233R40S50PC | IR | Fast recovery diode |
ST2600C30R2 | IR | Phase control thyristor |
ST2600C22R3L | IR | Phase control thyristor |
ST300C08L1 | IR | Phase control thyristor |
IRGBC20K | IR | Insulated gate bipolar transistor |
IRF9140 | IR | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A |
47LFR80 | IR | Standard recovery diode |
ST180C12C3L | IR | Phase control thyristor |
ST173C12CHK3 | IR | Inverter grade thyristor |
IRFPC30 | IR | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 2.2 Ohm, ID = 4.3 A |
SD103R14S20PSC | IR | Fast recovery diode |
IR8200B | IR | 3A, 55V DMOS H-bridge |
ST300C04C1 | IR | Phase control thyristor |
SD203R04S15PC | IR | Fast recovery diode |
ST380C06C0L | IR | Phase control thyristor |
IRFZ24NL | IR | Power MOSFET, 55V, 17A |
ST730C14L2 | IR | Phase control thyristor |
301U200P5 | IR | Standard recovery diode |
SD203R25S15MBC | IR | Fast recovery diode |
IRFP150N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A |
SD203R20S20PC | IR | Fast recovery diode |
302U160PD | IR | Standard recovery diode |
IRFD224 | IR | HEXFET power MOSFET |
SD103R16S15MBV | IR | Fast recovery diode |
ST223C04CHK1L | IR | Inverter grade thyristor |
72UF80A | IR | Standard recovery diode |
ST730C14L3 | IR | Phase control thyristor |