Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-106
C12S20C SD400OC40R SD203N12S20MSC 20ETS16STRL ST303C12HK2L ST700C22L2L PVI5013R ST303S10PFN1L 303U80P2 ST230S08P2 IRFN054 IRF3710S IRF7465 IRG4BC20S ST303C12HK0L SD253R10S15PSV SD600R08PSC SD153N04S10PV SD203R08S15MBC SD600R12MSC SD400N12PSC SD153N08S15MBV ST1200C12K3L IRGPC40S S
Część nr | Producent | Zastosowanie |
---|---|---|
SD153N14S10PBV | IR | Fast recovery diode |
SD823C12S20C | IR | Fast recovery diode |
SD400OC40R | IR | Standard recovery diode |
SD203N12S20MSC | IR | Fast recovery diode |
20ETS16STRL | IR | Surface mountable input rectifier diode |
ST303C12HK2L | IR | Inverter grade thyristor |
ST700C22L2L | IR | Phase control thyristor |
PVI5013R | IR | Photovoltaic isolator |
ST303S10PFN1L | IR | Inverter grade thyristor |
303U80P2 | IR | Standard recovery diode |
ST230S08P2 | IR | Phase control thyristor |
IRFN054 | IR | HEXFET power mosfet |
IRF3710S | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A |
IRF7465 | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.28 Ohm @ VGS = 10V, ID = 1.9A |
IRG4BC20S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A |
ST303C12HK0L | IR | Inverter grade thyristor |
SD253R10S15PSV | IR | Fast recovery diode |
SD600R08PSC | IR | Standard recovery diode |
SD153N04S10PV | IR | Fast recovery diode |
SD203R08S15MBC | IR | Fast recovery diode |
SD600R12MSC | IR | Standard recovery diode |
SD400N12PSC | IR | Standard recovery diode |
SD153N08S15MBV | IR | Fast recovery diode |
ST1200C12K3L | IR | Phase control thyristor |
IRGPC40S | IR | Insulated gate bipolar transistor |
SD203N14S15PBC | IR | Fast recovery diode |
SD300N28MSC | IR | Standard recovery diode |
303U250 | IR | Standard recovery diode |
SD203R16S15PV | IR | Fast recovery diode |
SD253N14S15PSV | IR | Fast recovery diode |