Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-116
D103N10S10MSC SD253R08S15PBV SD153N14S10MSV SD203R08S10MBC IRU1205CL IRFU3711 IRHF7310SE ST183C08CHK2 72UFR120PD ST300C18L2 SD103N08S10PC 309U80P4 ST280CH04C3L IRFZ34N 301U250P4 IRF5N4905 IRF3711S SD110OC32L SD203N08S10PBC 307UR80P5 IRF1010NS IRFP90N20D IRKH50014 ST1230C16K0 ST19
Część nr | Producent | Zastosowanie |
---|---|---|
SD200R20MBC | IR | Standard recovery diode |
47LF30 | IR | Standard recovery diode |
SD103N10S10MSC | IR | Fast recovery diode |
SD253R08S15PBV | IR | Fast recovery diode |
SD153N14S10MSV | IR | Fast recovery diode |
SD203R08S10MBC | IR | Fast recovery diode |
IRU1205CL | IR | 300mA ultra low dropout positive adjustable regulator |
IRFU3711 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.5mOhm, ID = 110A |
IRHF7310SE | IR | HEXFET transistor |
ST183C08CHK2 | IR | Inverter grade thyristor |
72UFR120PD | IR | Standard recovery diode |
ST300C18L2 | IR | Phase control thyristor |
SD103N08S10PC | IR | Fast recovery diode |
309U80P4 | IR | Standard recovery diode |
ST280CH04C3L | IR | Phase control thyristor |
IRFZ34N | IR | Power MOSFET |
301U250P4 | IR | Standard recovery diode |
IRF5N4905 | IR | HEXFET power MOSFET surface mount. BVDSS = -50V, RDS(on) = 0.024 Ohm, ID = -55A |
IRF3711S | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A |
SD110OC32L | IR | Standard recovery diode |
SD203N08S10PBC | IR | Fast recovery diode |
307UR80P5 | IR | Standard recovery diode |
IRF1010NS | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. |
IRFP90N20D | IR | HEXFET power MOSFET. VDSS = 200 V, RDS(on) = 0.023 Ohm, ID = 94 A |
IRKH50014 | IR | Thyristor/diode and thyristor/thyristor |
ST1230C16K0 | IR | Phase control thyristor |
ST1900C45R3L | IR | Phase control thyristor |
SD110OC08C | IR | Standard recovery diode |
ST110S14P2 | IR | Phase control thyristor |
302UR120APD | IR | Standard recovery diode |