Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-117
SD253N12S15PV SD103R04S15PSC SD300N32PSC IRHNA7360SE IRFL110 SD150N20MBC SD203R10S10PBC 301UA160P2 IRFR4105TRR SD153N04S15PSV JANTX2N6764 IRFP350LC IRG4RC10SD IRU1030CT 307U120 IRFB9N30A ST333S08MFM3 ST280CH04C3 301UR200P4 SD103R04S15MC 301URA120P2 30BQ060 ST110S08P2 307URA80 45
Część nr | Producent | Zastosowanie |
---|---|---|
ST303C12LHK1 | IR | Inverter grade thyristor |
IRF3808 | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A |
SD253N12S15PV | IR | Fast recovery diode |
SD103R04S15PSC | IR | Fast recovery diode |
SD300N32PSC | IR | Standard recovery diode |
IRHNA7360SE | IR | HEXFET transistor |
IRFL110 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A |
SD150N20MBC | IR | Standard recovery diode |
SD203R10S10PBC | IR | Fast recovery diode |
301UA160P2 | IR | Standard recovery diode |
IRFR4105TRR | IR | N-channel power MOSFET for fast switching applications, 55V, 27A |
SD153N04S15PSV | IR | Fast recovery diode |
JANTX2N6764 | IR | HEXFET power mosfet |
IRFP350LC | IR | HEXFET power mosfet |
IRG4RC10SD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
IRU1030CT | IR | 3A low dropout positive adjustable regulator |
307U120 | IR | Standard recovery diode |
IRFB9N30A | IR | HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A |
ST333S08MFM3 | IR | Inverter grade thyristor |
ST280CH04C3 | IR | Phase control thyristor |
301UR200P4 | IR | Standard recovery diode |
SD103R04S15MC | IR | Fast recovery diode |
301URA120P2 | IR | Standard recovery diode |
30BQ060 | IR | Schottky rectifier |
ST110S08P2 | IR | Phase control thyristor |
307URA80 | IR | Standard recovery diode |
45LF5 | IR | Standard recovery diode |
SD1053C22S20L | IR | Fast recovery diode |
ST330C12L2L | IR | Phase control thyristor |
303UR200P5 | IR | Standard recovery diode |