Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-102

N04MBC SD253N14S15PBV IRFPS37N50A JANTXV2N6796 IRU1050CD IRGBC30F IRU1010-18CP ST180S20M2 SD300N20PSC PVI5013RS-T IRG4BC15UD-S ST730C18L2L 305UR80P3 25TTS12STRL IRFP253 SD203R04S10PC 305UA160P4 ST203C10CHH3L IRFY240CM 309URA80P2 SD253N04S15PSV 303URA250P4 SD103R25S10MBC 45L120D S

IR Prospekty Katalog-102

Część nrProducentZastosowanie
SD103N08S15MSC IRFast recovery diode
SD400N04MBC IRStandard recovery diode
SD253N14S15PBV IRFast recovery diode
IRFPS37N50A IRHEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.13 Ohm, ID = 36 A
JANTXV2N6796 IRHEXFET power mosfet
IRU1050CD IR5A low dropout positive adjustable regulator
IRGBC30F IRInsulated gate bipolar transistor
IRU1010-18CP IR1A low dropout positive fixed 1.8V regulator
ST180S20M2 IRPhase control thyristor
SD300N20PSC IRStandard recovery diode
PVI5013RS-T IRPhotovoltaic isolator
IRG4BC15UD-S IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
ST730C18L2L IRPhase control thyristor
305UR80P3 IRStandard recovery diode
25TTS12STRL IRSurface mountable phase control SCR
IRFP253 IRN-channel NEXFET, 150V, 27A
SD203R04S10PC IRFast recovery diode
305UA160P4 IRStandard recovery diode
ST203C10CHH3L IRInverter grade thyristor
IRFY240CM IRHEXFET power mosfet
309URA80P2 IRStandard recovery diode
SD253N04S15PSV IRFast recovery diode
303URA250P4 IRStandard recovery diode
SD103R25S10MBC IRFast recovery diode
45L120D IRStandard recovery diode
ST330C08L2L IRPhase control thyristor
SD153R10S15PV IRFast recovery diode
CPU165MM IRIGBT SIP module
307UR200P2 IRStandard recovery diode
ST2100C32R1 IRPhase control thyristor

<< 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 >>