Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC20S
IRG4BC20S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC20S
IRG4BC20S spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
Producent : IR
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 172 KB
Zastosowanie : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A