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IRF5210 spec: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
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IRF5210 Datasheet i Spec
Producent : IR
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 137 KB
Zastosowanie : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210 PDF Pobierz