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IRFB59N10D spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
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IRFB59N10D Datasheet i Spec
Producent : IR
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 151 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFB59N10D PDF Pobierz