Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFB9N60A
IRFB9N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFB9N60A
IRFB9N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Producent : IR
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Pins : 3
Temperatura : Min -55 °C | Max 150 °C
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Zastosowanie : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A