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IRFBF20S spec: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A
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IRFBF20S Datasheet i Spec
Producent : IR
Opakowanie : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 342 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A
IRFBF20S PDF Pobierz