IRG4BC20SD-S spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A

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IRG4BC20SD-S Datasheet i Spec

Producent : IR

Opakowanie : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 420 KB

Zastosowanie : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A