Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4RC10K
IRG4RC10K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4RC10K
IRG4RC10K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
Producent : IR
Opakowanie : D-PAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 147 KB
Zastosowanie : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A