VTE1113 spec: GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.

Podobne VTE1113

VTE1063
- GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1113
- GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
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VTE1281-1
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VTE1113 Datasheet i Spec

Producent : PerkinElmer

Opakowanie : TO-46

Pins : 2

Temperatura : Min -55 °C | Max 125 °C

Rozmiar : 27 KB

Zastosowanie : GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.