Podobne F1001C

  • F1001
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1001C
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1003
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1004
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1005
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1006
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1007
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 6 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 36 KB

Zastosowanie : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1001C PDF Pobierz