F1007 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1007

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor