F1014 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1014

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F1014
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F1014 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor