F1018 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1018

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor