F1022 spec: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1022

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1022 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor