F1027 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1027

F1020
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F1021
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F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 43 KB

Zastosowanie : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor