F1410 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1410

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor