Podobne F2012

  • F2012
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 40 KB

Zastosowanie : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2012 PDF Pobierz