Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > F2012
F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > F2012
F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Producent : Polyfet RF
Opakowanie :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 40 KB
Zastosowanie : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor