F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F2012

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 40 KB

Zastosowanie : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor