Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > F2013
F2013 spec: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 41 KB
Zastosowanie : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013 PDF Pobierz