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Podobne F2211

  • F2211
    • 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2211 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 38 KB

Zastosowanie : 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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