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Podobne F2212

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    • 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2212
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2213
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2212 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 38 KB

Zastosowanie : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2212 PDF Pobierz