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P4 302U120PD IRF644NL SD103N16S10PBV 309U250P3 112RKI120S90 IRFU9024N 110RKI120S90 SD103R16S20PV ST230S12P0V ST230S04P1L 45LFR 301U160P5 IRGPC40U SD203R14S10PBC IRGBC30FD2 ST183C04CHK3L ST230C14C3L 303UR250P5 IRG4BC10K IRFZ44NL SD400N04PC SD233R36S50MC IRFP2907 309URA120P4 SD103R

IR Prospekty Katalog-11

Część nrProducentZastosowanie
303UA120P3 IRStandard recovery diode
309URA200P4 IRStandard recovery diode
302U120PD IRStandard recovery diode
IRF644NL IRN-channel power MOSFET, 250V, 14A
SD103N16S10PBV IRFast recovery diode
309U250P3 IRStandard recovery diode
112RKI120S90 IRPhase control thyristor
IRFU9024N IRHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11A
110RKI120S90 IRPhase control thyristor
SD103R16S20PV IRFast recovery diode
ST230S12P0V IRPhase control thyristor
ST230S04P1L IRPhase control thyristor
45LFR IRStandard recovery diode
301U160P5 IRStandard recovery diode
IRGPC40U IRInsulated gate bipolar transistor
SD203R14S10PBC IRFast recovery diode
IRGBC30FD2 IRInsulated gate bipolar transistor with ultrafast soft reconery diode
ST183C04CHK3L IRInverter grade thyristor
ST230C14C3L IRPhase control thyristor
303UR250P5 IRStandard recovery diode
IRG4BC10K IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRFZ44NL IRPower MOSFET, 55V, 59A
SD400N04PC IRStandard recovery diode
SD233R36S50MC IRFast recovery diode
IRFP2907 IRHEXFET power MOSFET. VDSS = 75 V, RDS(on) = 4.5 mOhm, ID = 209 A
309URA120P4 IRStandard recovery diode
SD103R20S20MC IRFast recovery diode
45LFR20 IRStandard recovery diode
82RIA120M IRPhase control thyristor
SD203R14S15MBC IRFast recovery diode

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