Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-11
P4 302U120PD IRF644NL SD103N16S10PBV 309U250P3 112RKI120S90 IRFU9024N 110RKI120S90 SD103R16S20PV ST230S12P0V ST230S04P1L 45LFR 301U160P5 IRGPC40U SD203R14S10PBC IRGBC30FD2 ST183C04CHK3L ST230C14C3L 303UR250P5 IRG4BC10K IRFZ44NL SD400N04PC SD233R36S50MC IRFP2907 309URA120P4 SD103R
Część nr | Producent | Zastosowanie |
---|---|---|
303UA120P3 | IR | Standard recovery diode |
309URA200P4 | IR | Standard recovery diode |
302U120PD | IR | Standard recovery diode |
IRF644NL | IR | N-channel power MOSFET, 250V, 14A |
SD103N16S10PBV | IR | Fast recovery diode |
309U250P3 | IR | Standard recovery diode |
112RKI120S90 | IR | Phase control thyristor |
IRFU9024N | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -11A |
110RKI120S90 | IR | Phase control thyristor |
SD103R16S20PV | IR | Fast recovery diode |
ST230S12P0V | IR | Phase control thyristor |
ST230S04P1L | IR | Phase control thyristor |
45LFR | IR | Standard recovery diode |
301U160P5 | IR | Standard recovery diode |
IRGPC40U | IR | Insulated gate bipolar transistor |
SD203R14S10PBC | IR | Fast recovery diode |
IRGBC30FD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
ST183C04CHK3L | IR | Inverter grade thyristor |
ST230C14C3L | IR | Phase control thyristor |
303UR250P5 | IR | Standard recovery diode |
IRG4BC10K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
IRFZ44NL | IR | Power MOSFET, 55V, 59A |
SD400N04PC | IR | Standard recovery diode |
SD233R36S50MC | IR | Fast recovery diode |
IRFP2907 | IR | HEXFET power MOSFET. VDSS = 75 V, RDS(on) = 4.5 mOhm, ID = 209 A |
309URA120P4 | IR | Standard recovery diode |
SD103R20S20MC | IR | Fast recovery diode |
45LFR20 | IR | Standard recovery diode |
82RIA120M | IR | Phase control thyristor |
SD203R14S15MBC | IR | Fast recovery diode |