| Część nr | Producent | Zastosowanie |
|---|
| SD203R04S20PSC | IR | Fast recovery diode |
| IR2101S | IR | High and low side driver |
| JANTX2N6851 | IR | HEXFET power mosfet |
| 301U120P3 | IR | Standard recovery diode |
| ST303C08CHK3 | IR | Inverter grade thyristor |
| IRF7901D1 | IR | Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). |
| ST203S12PFJ0L | IR | Inverter grade thyristor |
| 301U200P2 | IR | Standard recovery diode |
| 45LFR160D | IR | Standard recovery diode |
| SD203N10S10PSC | IR | Fast recovery diode |
| IRU1207-18CS | IR | 1A very low dropout positive fixed 1.8V regulator |
| SD453N12S20MTC | IR | Fast recovery diode |
| ST300C04C0 | IR | Phase control thyristor |
| IRFL014N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.16 Ohm, ID = 1.9A |
| SD150R20PSC | IR | Standard recovery diode |
| SD823C25S20C | IR | Fast recovery diode |
| ST203C10CHH1 | IR | Inverter grade thyristor |
| IRF150 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A |
| IRFR320 | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A |
| SD203N20S20MBC | IR | Fast recovery diode |
| IRGBC20KD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| ST180C16C1 | IR | Phase control thyristor |
| 303U250P4 | IR | Standard recovery diode |
| SD103N14S15PSC | IR | Fast recovery diode |
| IR2132 | IR | 3-phase bridge driver |
| IRU1050CT | IR | 5A low dropout positive adjustable regulator |
| SD203N04S20MBC | IR | Fast recovery diode |
| ST180S20M2L | IR | Phase control thyristor |
| IRG4BC10S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| ST3230C16R1L | IR | Phase control thyristor |
