Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-17
20PC SD103N16S10PSV ST203S12MFJ0 ST183C04CHK0 30BQ015 ST1230C12K3 302UR160APD SD150N25MSC IRFU9214 ST083S10PFK1 SD153N16S10PBV ST173C10CHK0 SD203N08S15PSC SD153N10S15MBV SD300R25MSC ST300C04C2L IRFI630G IRF7301 45LR20 307U200P5 ST730C08L1L ST730C18L1L SD103R08S15PC 305UR200P3 IRF
Część nr | Producent | Zastosowanie |
---|---|---|
ST180C20C2 | IR | Phase control thyristor |
SD203R04S20PC | IR | Fast recovery diode |
SD103N16S10PSV | IR | Fast recovery diode |
ST203S12MFJ0 | IR | Inverter grade thyristor |
ST183C04CHK0 | IR | Inverter grade thyristor |
30BQ015 | IR | 1707 |
ST1230C12K3 | IR | Phase control thyristor |
302UR160APD | IR | Standard recovery diode |
SD150N25MSC | IR | Standard recovery diode |
IRFU9214 | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A |
ST083S10PFK1 | IR | Inverter grade thyristor |
SD153N16S10PBV | IR | Fast recovery diode |
ST173C10CHK0 | IR | Inverter grade thyristor |
SD203N08S15PSC | IR | Fast recovery diode |
SD153N10S15MBV | IR | Fast recovery diode |
SD300R25MSC | IR | Standard recovery diode |
ST300C04C2L | IR | Phase control thyristor |
IRFI630G | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 5.9 A |
IRF7301 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.050 Ohm. |
45LR20 | IR | Standard recovery diode |
307U200P5 | IR | Standard recovery diode |
ST730C08L1L | IR | Phase control thyristor |
ST730C18L1L | IR | Phase control thyristor |
SD103R08S15PC | IR | Fast recovery diode |
305UR200P3 | IR | Standard recovery diode |
IRF9640S | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -11A |
ST2100C38R3 | IR | Phase control thyristor |
SD1553C25S20K | IR | Fast recovery diode |
ST303C10CHK0 | IR | Inverter grade thyristor |
IRG4BC40K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A |