IR Prospekty Katalog-3
| Część nr | Producent | Zastosowanie |
|---|---|---|
| IRF7807 | IR | HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm. |
| IRFI3205 | IR | "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A" |
| SD153N10S10MV | IR | Fast recovery diode |
| IRF1607 | IR | "HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0075 Ohm, ID = 142A." |
| SD103N14S20PBC | IR | Fast recovery diode |
| 301UR80P5 | IR | Standard recovery diode |
| SD300R32MBC | IR | Standard recovery diode |
| IRC640 | IR | "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm" |
| SD103R10S20MC | IR | Fast recovery diode |
| SD153R16S15MV | IR | Fast recovery diode |
| ST2100C30R3L | IR | Phase control thyristor |
| SD253N16S20PV | IR | Fast recovery diode |
| ST180S12M0V | IR | Phase control thyristor |
| ST700C16L0 | IR | Phase control thyristor |
| 300UF160APD | IR | Standard recovery diode |
| ST103S04PFN2 | IR | Phase control thyristor |
| IRC630 | IR | "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm" |
| SD103R10S15MBC | IR | Fast recovery diode |
| SD300R28MSC | IR | Standard recovery diode |
| 200HF80MSV | IR | Standard recovery diode |
| ST173C12HK0L | IR | Inverter grade thyristor |
| ST733C08LHK0L | IR | Inverter grade thyristor |
| SD253R16S15MBV | IR | Fast recovery diode |
| SD203N20S15MBC | IR | Fast recovery diode |
| 309U120P5 | IR | Standard recovery diode |
| SD103N20S10MBC | IR | Fast recovery diode |
| 303U120P4 | IR | Standard recovery diode |
| SD303C20S10C | IR | Fast recovery diode |
| ST330S04M1L | IR | Phase control thyristor |
| SD453R16S20MSC | IR | Fast recovery diode |