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IRF5803 spec: HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
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IRF5803 Datasheet i Spec
Producent : IR
Opakowanie : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 119 KB
Zastosowanie : HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
IRF5803 PDF Pobierz