Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRF5EA1310
IRF5EA1310 spec: HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A
Podobne IRF5EA1310
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5EA1310 Datasheet i Spec
Producent : IR
Opakowanie : LCC
Pins : 28
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 261 KB
Zastosowanie : HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A
IRF5EA1310 PDF Pobierz