F1060 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1060

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1060 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor