F1065 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1065

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1065 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor