F1066 spec: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1066

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F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1066 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 42 KB

Zastosowanie : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor