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Najnowsze Polyfet RF Karta katalogowa PDF

Część nrZastosowanie
F1060 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
SR706 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
F1007 Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
SK202 10 Watt, silicon gate enhancement mode RF power VDMOS transistor
F1415 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1070 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
SP702 40 Watt, silicon gate enhancement mode RF power VDMOS transistor
SH702 90 Watt, silicon gate enhancement mode RF power VDMOS transistor
LR401 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
F2211 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2041 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
SM706 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
LQ821 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
SP204 15 Watt, silicon gate enhancement mode RF power VDMOS transistor
F1410 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1034 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
L8701P 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
SR746 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
F1520 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1040 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
L8821P 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
SQ742 90 Watt, silicon gate enhancement mode RF power VDMOS transistor
LZ402 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
F1120 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
SM705 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
F1004 Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
LB401 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
F2201 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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Polyfet RF Devices

Polyfet RF DevicesProspekty Katalog

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